Physical properties of TiS2 thin films

Abstract

Quantitative experimental results are reported for the optical, electrical, and crystallographic properties of the layered dichalcogenide TiS2. A new method, utilizing a combination of titanium sputtering and reaction with H2S at low temperatures, was used to synthesize this group-IV transition-metal dichalcogenide. Both the electrical data and results of optical studies support the semimetal picture as opposed to the semiconducting model. © 1976 The American Physical Society.