Conference paper
Device and circuit design issues in SOI technology
G. Shahidi, A. Ajmera, et al.
CICC 1999
Photoluminescence excitation measurements are shown to accurately determine the spectral response of Ga1-xAlxAs-GaAs heterojunction solar cells. The technique is applicable to as-grown structures prior to processing into final devices and can also be used to study postgrowth techniques designed to enhance the spectral response of such devices. The measurements indicate that some surface recombination passivation is obtained with anodization.
G. Shahidi, A. Ajmera, et al.
CICC 1999
K. Weiser, M.H. Brodsky, et al.
Journal of Non-Crystalline Solids
J. Woodall, H.J. Hovel
Applied Physics Letters
D.L. Rogers, J. Woodall, et al.
IEEE T-ED