Byungha Shin, Yu Zhu, et al.
Thin Solid Films
We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic of heavily compensated material with a high quasi donor-acceptor pair density, as determined by the relationship between peak height, peak position, and excitation intensity, as well as the carrier lifetimes at different wavelengths. The blue-shift of the defect-derived peak position is used to estimate the quasi donor-acceptor pair spacing and density. The data indicate an average pair spacing of roughly 3.3 nm, yielding an overall total radiative-defect density of ∼1.3 × 1019 cm-3. © 2013 AIP Publishing LLC.
Byungha Shin, Yu Zhu, et al.
Thin Solid Films
Talia S. Gershon, Byungha Shin, et al.
Advanced Energy Materials
I. Geppert, M. Eizenberg, et al.
ECS Transactions
Oki Gunawan, Tayfun Gokmen, et al.
Applied Physics Letters