Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
We report measurements of the photoionization cross section for the DX center in Si-doped AlxGa1-xAs. The temperature dependence of the photoionization cross section for the Si DX center is reported for the first time. Data have been measured in both direct- and indirect-gap material and over a much wider temperature range than was possible for the Te DX center, thus providing a more stringent test of any model than the earlier data. The results agree well with the large-lattice-relaxation model proposed by Lang et al. © 1987 The American Physical Society.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Revanth Kodoru, Atanu Saha, et al.
arXiv
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids