J.H. Stathis
IRPS 2001
In this letter we show that UV illumination of porous silicon causes a decrease in its luminescence efficiency. Infrared measurements allow us to associate the efficiency decrease with a loss of hydrogen from the silicon surface. We also find that the rate at which the luminescence intensity degrades increases rapidly when the illumination energy exceeds a threshold near 3.0 eV. We conclude that the decrease in photoluminescence efficiency occurs as a result of optically induced hydrogen desorption and discuss possible explanations for the energy threshold.
J.H. Stathis
IRPS 2001
B.P. Linder, D.J. Frank, et al.
VLSI Technology 2001
F. Palumbo, S. Lombardo, et al.
Microelectronic Engineering
K. Choi, H. Jagannathan, et al.
VLSI Technology 2009