B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
An As-stabilized Al0.7Ga0.3As(100) surface grown by molecular-beam epitaxy was studied using photoemission techniques. Core-level shifts and relative emission intensities at the surface were used to deduce the surface structure. High-energy-electron-diffraction and surface-contamination-rate measurements were also made. The results indicate that this surface is very similar to the As-stabilized GaAs(100)-c (2×8) surface in structure with complete depletion of Al at the surface. © 1982 The American Physical Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
David B. Mitzi
Journal of Materials Chemistry
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics