Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Energy distributions at hν =21.2 eV show the energy levels and level widths of sorbed gases (H2, N2, CO, CO2 and O2) on Ti. CO and CO2 appear to dissociate into Ti/0 + Ti/C upon adsorption. Exposure to {greater-than or approximate} 10-4Torr sec of H2 and O2 results in the formation of Ti compounds on the surface. © 1972.
T.N. Morgan
Semiconductor Science and Technology
J.C. Marinace
JES
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