Richard Haight, Alfred Wagner, et al.
Journal of Modern Optics
We describe an experiment designed to carry out photoelectron spectroscopy on individual nanowires of Si and Ge. Laser generated, 150 fs pulses of 200 nm light (6.2 eV) were focused onto a single Si or Ge nanowire; the ensuing photoemitted electrons were measured with 20 meV resolution. Fermi level locations within the individual Si and Ge nanowire band gaps and work functions of hydrogen terminated nanowires were measured. Polarization dependent electron emission was observed and compared with Mie theory. © 2007 American Institute of Physics.
Richard Haight, Alfred Wagner, et al.
Journal of Modern Optics
Richard Haight, Dennis Hayden, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
D. Aaron R. Barkhouse, Richard Haight, et al.
Applied Physics Letters
Rivka-Galya Nir-Harwood, Guy Cohen, et al.
ACS Nano