Photoelectron spectroscopy of individual nanowires of Si and Ge

Abstract

We describe an experiment designed to carry out photoelectron spectroscopy on individual nanowires of Si and Ge. Laser generated, 150 fs pulses of 200 nm light (6.2 eV) were focused onto a single Si or Ge nanowire; the ensuing photoemitted electrons were measured with 20 meV resolution. Fermi level locations within the individual Si and Ge nanowire band gaps and work functions of hydrogen terminated nanowires were measured. Polarization dependent electron emission was observed and compared with Mie theory. © 2007 American Institute of Physics.