Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than one-third of the total channel length from both source and drain sides; hence, most of the channel is affected by the metal. The potential barrier between the metal-controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, V Dirac, the original p-type graphene channel turns into a p-n-p channel. When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection. © 2009 American Chemical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences