L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC. © 1983 AIME.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Revanth Kodoru, Atanu Saha, et al.
arXiv