Conference paper
Channel doping impact on FinFETs for 22nm and beyond
Chung-Hsun Lin, R. Kambhampati, et al.
VLSI Technology 2012
We present a methodology to generate performance-aware corner models (PAMs). Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (± σ and ±2σ) simulation and Monte Carlo simulation. Furthermore, PAM supports the practice of application-specific corner cards, for example, for gain-sensitive applications. © 2009 IEEE.
Chung-Hsun Lin, R. Kambhampati, et al.
VLSI Technology 2012
Miaomiao Wang, Pranita Kulkarni, et al.
IRPS 2010
Cindy Wang, Josephine Chang, et al.
VLSI-TSA 2009
Sriramkumar Venugopalan, Muhammed A. Kari, et al.
SISPAD 2012