Scaling of ino.7gao.3as buried-channel MOSFETs
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
D.K. Sadana, J.P. De Souza, et al.
Applied Physics Letters
J.P. De Souza, D.K. Sadana
Congress of the Brazilian Society of Microelectronics 1990
M. Hamaguchi, H. Yin, et al.
VLSI Technology 2008