R. Ghez, M.B. Small
JES
The oxidation of ultra high-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and chemically inhomogeneous, and both subsurface oxidation and multibonding geometries occur already at submonolayer coverages. © 1984 The American Physical Society.
R. Ghez, M.B. Small
JES
R. Ghez, J.S. Lew
Journal of Crystal Growth
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME