H.J. Wen, R. Ludeke
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Oxidation of Clean Ge and Si Surfaces
Abstract
The low-energy-electron loss spectra of oxygen adsorbed at room temperature on clean Si and Ge (100) and (111) surfaces suggest that each oxygen atom is doubly bonded to a surface atom. Using a chemical-bonding argument, it is shown that this complex is also energetically more favorable than previously proposed oxidation models. © 1975 The American Physical Society.