M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We investigated the oxidation behavior of ZrN thin films in dry O2 with the goal of possible applications of ZrN in metal/oxide/semiconductor integrated circuits. We find the oxidation process to be thermally activated with an activation energy Ea of 2.5±0.1 eV in the temperature range 475-650°C. It is suggested that the oxygen diffusing through the already-grown oxide limits the oxidation rate. X-ray analysis indicates that a mixture of monoclinic and cubic ZrO2 is formed. This mixture persists up to the highest oxidation temperatures used in this study. © 1983.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A. Gangulee, F.M. D'Heurle
Thin Solid Films