Conference paper
Surface processes in plasma-assisted etching
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The addition of a small concentration of suitably chosen noble gas to a reactive plasma is shown to permit the determination of the functional dependence of reactive particle density on plasma parameters. Examples illustrating the simplicity of this method are presented using F atomic emission from plasma-etching discharges and a comparison is made to available data in the literature.
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J. Ahn, C.R. Perleberg, et al.
Journal of Applied Physics
E.W. Eckstein, J.W. Coburn, et al.
International Journal of Mass Spectrometry and Ion Physics
J.W. Coburn, W.W. Harrison
Applied Spectroscopy Reviews