J.-M. Halbout, D. Grischkowsky
Applied Physics Letters
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.
J.-M. Halbout, D. Grischkowsky
Applied Physics Letters
B. Fan, D. Grischkowsky, et al.
Optics Letters
Joshua E. Rothenberg, D. Grischkowsky
CLEO 1984
Joshua E. Rothenberg, D. Grischkowsky, et al.
IQEC 1984