Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
The formation of subbands in In1-xGaxAsGaSb1-yAsy superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb. © 1978.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009