Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
The formation of subbands in In1-xGaxAsGaSb1-yAsy superlattices has resulted in entirely different absorption characteristics from those of the host semiconductors. The measured absorption edges agree with the calculated energy gaps of the superlattices of various configurations, establishing that the conduction bandedge of InAs lies approximately 0.15eV below the valence bandedge of GaSb. © 1978.
Imran Nasim, Melanie Weber
SCML 2024
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ming L. Yu
Physical Review B
Julien Autebert, Aditya Kashyap, et al.
Langmuir