Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
We report the pressure-dependent optical absorption in the fundamental edge region of amorphous silicon prepared by sputtering and glow discharge methods. For pressures up to 20 kbar we find a negative pressure coefficient of about 1 × 10-6 eV/bar for the isoabsorption energies. In a higher range of pressure, starting with pressures of about 50 kbar, we observed irreversible red shifts in the absorption curves. © 1977 The American Physical Society.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano