Opportunities for standard silicon technology in RFMicrowave applications

Abstract

Various components for the integration of Monolithic Microwave Integrated Circuits (MMIC's) in a 0.8 μm-BiCMOS silicon technology, such as high-Q spiral inductors and capacitors, broad-band transformers, and varactor diodes are presented and discussed. Inductor Q's of close to 10 at 2 nH inductance have been achieved by shunting multiple interconnect levels together, by sufficient spacing of the inductor structure from the substrate, and by using high substrate resistivity.