William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f-frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency h is found to be proportional to the de transconductance gm of the device, consistent with the relation h = gJßπC¢). The peak h increases with a reduced gate length, and h as high as 26 GHz is measured for a graphene transί stor with a gate iength of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Imran Nasim, Melanie Weber
SCML 2024
A. Reisman, M. Berkenblit, et al.
JES