Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The temperature dependence of the EPR linewidth and g shift are measured in amorphous evaporated films of GdxY0.33-xAl0.67 with 0.0008<x<0.33. Both the g shift and the Korringa slope of the linewidth-versus-temperature curve increase with decreasing x in a fashion which can be fitted to classic EPR bottleneck theory. This procedure yields the spin-lattice relaxation rate for the conduction electrons consisting of a "structural" term (1.3-6) × 1011 Hz and a term proportional to Gd concentration of 1×1013x. The latter is within 50% of the value in the crystalline counterpart, but the former is larger by a factor of 3 to 15, showing for the first time (aside from studies on liquids) the effect of amorphous structure on this relaxation rate. Similarity of unbottlenecked g factors and Korringa slopes of amorphous and crystalline materials suggest that the conduction band is not strongly affected by structure. © 1981 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P. Alnot, D.J. Auerbach, et al.
Surface Science
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology