About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
ON THE IMPURITY PROFILES OF DOWN SCALED BIPOLAR TRANSISTORS.
Abstract
The design and reliability issues unique to bipolar scaling are discussed. They are caused by the close proximity of the heavily doped emitter and extrinsic base regions and by the contradicting heat-cycle requirement for forming the extrinsic base and the intrinsic base. An insufficient lateral diffusion from the extrinsic base leads to premature punch-through at the link region between the intrinsic base and the extrinsic base, while an excessive lateral diffusion reduces the current gain and cutoff frequency in addition, causes emitter-perimeter leakage and accelerates stress-induced current-gain degradation. The tradeoffs between the emitter-base reverse leakage current and the control of the thin base profile are also discussed.