F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Paper
On the effects of implantation of ions in the MeV energy range into silicon
Abstract
The effects of MeV phosphorus implantation and subsequent process steps on the electrical characteristics of p-channel field-effect transistors (FET), Schottky barrier diodes and p-n junctions were studied. The observed I-V characteristics can be explained in terms of spatially localized defects induced by the high-energy implantation and correlate well with the results using Monte Carlo simulation and C-V profiling techniques. © 1986.
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