PaperSmall Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical InsightsRevanth Kodoru, Atanu Saha, et al.arXiv
PaperKinetic model for the chemical vapor deposition of tungsten in the silane reduction processJulian J. HsiehJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperInterface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficientR. Ghez, J.S. LewJournal of Crystal Growth
Conference paperInterface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substratesJ.H. Stathis, R. Bolam, et al.INFOS 2005
