PaperDiffusion of boron, phosphorus, and arsenic implanted in thin films of cobalt disilicideO. Thomas, P. Gas, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperCritical test of the structure of the ordered phase in epitaxially grown SixGe1-x filmsF.K. LeGoues, R.M. Tromp, et al.Physical Review B
Conference paperCHARACTERIZATION OF IC DEVICES FABRICATED IN LOW TEMPERATURE (550 degree C) EPITAXY BY UHV/CVD TECHNIQUE.T.N. Nguyen, D.L. Harame, et al.IEDM 1985