PaperMeasurement of the activation barrier to nucleation of dislocations in thin filmsF.K. LeGoues, P.M. Mooney, et al.Physical Review Letters
PaperHigh-temperature SiO2 decomposition at the SiO2/Si interfaceR.M. Tromp, G.W. Rubloff, et al.Physical Review Letters
PaperStacking faults in WSi2: Resistivity effectsF.M. d'Heurle, F.K. LeGoues, et al.Applied Physics Letters
PaperCritique of "atom probe field ion microscopy of the decomposition of Cu-2.7 A/O Co"F.K. LeGoues, T.L. McDevitt, et al.Scripta Metallurgica
