Andrea Bahgat Shehata, Franco Stellari, et al.
ISTFA 2014
The observation of a type of hot-electron luminescence from deep submicron Si MOSFETs in the off state was presented, its properties were characterized and its use as a sensitive on-chip voltage probe was demonstrated. Luminescence was found to be exponentially dependent on voltages applied to the device and behaves similarly to its off-state leakage current. Time-resolved measurements of this luminescence allowed extraction of on-chip voltages in complementary metal-oxide semiconductor integrated circuits. The application of this technique was demonstrated to various signal integrity issues, such as characterization of crosstalk and power supply noise.
Andrea Bahgat Shehata, Franco Stellari, et al.
ISTFA 2014
Stas Polonsky, Keith A. Jenkins, et al.
IEEE ITC 2004
Alan Weger, Steven Voldman, et al.
IRPS 2003
Binquan Luan, Ali Afzali, et al.
Journal of Physical Chemistry B