I. Adesida, M. Arafa, et al.
Microelectronic Engineering
We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.
I. Adesida, M. Arafa, et al.
Microelectronic Engineering
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
P.J. Wang, B.S. Meyerson, et al.
Applied Physics Letters
W.X. Gao, K. Ismail, et al.
Applied Physics Letters