S. Guha, H. Munekata, et al.
Journal of Crystal Growth
The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.
S. Guha, H. Munekata, et al.
Journal of Crystal Growth
G. Bastard, L.L. Chang
Physical Review B
E. Mendez, L. Esaki, et al.
Physical Review Letters
D.D. Awschalom, J.M. Hong, et al.
Physical Review Letters