I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Two phenomena are observed for transverse magnetotunneling (B⊥J) from an accumulation layer in n- GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors. One effect is a strong dependence of tunnel currents, J, at high applied voltage and high current densities, on the angle between J and the magnetic field, B. The second effect is the observation of structure in tunnel currents for applied voltages between 0.15 V and 0.6 V which is interpreted to result from tunneling into Landau levels formed in the n+ GaAs electrode. © 1987.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010