J.A. Barker, D. Henderson, et al.
Molecular Physics
Two phenomena are observed for transverse magnetotunneling (B⊥J) from an accumulation layer in n- GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors. One effect is a strong dependence of tunnel currents, J, at high applied voltage and high current densities, on the angle between J and the magnetic field, B. The second effect is the observation of structure in tunnel currents for applied voltages between 0.15 V and 0.6 V which is interpreted to result from tunneling into Landau levels formed in the n+ GaAs electrode. © 1987.
J.A. Barker, D. Henderson, et al.
Molecular Physics
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Revanth Kodoru, Atanu Saha, et al.
arXiv
T.N. Morgan
Semiconductor Science and Technology