P.J. Stiles, M.H. Brodsky
Solid State Communications
It is suggested that resonant tunneling via defect-related states is an important mechanism for high-field carrier injection into thin SiO2 films of metal-oxide-semiconductor structures. A model is also proposed for high-field insulator breakdown which cannot be explained by available theories. © 1983 The American Physical Society.
P.J. Stiles, M.H. Brodsky
Solid State Communications
M.H. Brodsky, G.H. Döhler
C R C Critical Reviews in Solid State Sciences
B. Ricco, M.Ya. Azbel
Physical Review B
M.H. Brodsky, A. Lurio
Physical Review B