UNIFIED VIEW OF SCHOTTKY BARRIER FORMATION.
J. Tersoff
ICPS Physics of Semiconductors 1984
We calculate the properties of p-n junctions, n-i junctions, and Schottky barriers made on a single-wall carbon nanotube. In contrast to planar bulk junctions, the depletion width for nanotubes varies exponentially with inverse doping. In addition, there is a very long-range (logarithmic) tail in the charge distribution, extending over the entire tube. These effects can render traditional devices unworkable, while opening new possibilities for device design. Our general conclusions should apply to a broad class of nanotube heterojunctions, and to other quasi-one-dimensional “molecular wire” devices. © 1999 The American Physical Society.
J. Tersoff
ICPS Physics of Semiconductors 1984
Vasili Perebeinos, J. Tersoff, et al.
Physical Review Letters
J. Tersoff
Applied Physics Letters
François Léonard, J. Tersoff
Applied Physics Letters