Nonlinear optical coefficient of alas thin film on gaas substrate

Abstract

We report the first measurement of the nonlinear optical coefficient, d14, at the fundamental wavelength of 1.06 µm, of AlAs grown by molecular beam epitaxy. The d coefficient is deduced from the intensities of second-harmonic waves reflected from an AlAs film grown on GaAs. Multiple reflections in the film and second-harmonic generation in the substrate are taken into account. The ratio d14(AlAs)/d14(GaAs) is found to be 0.23±0.06. © 1992 The Japan Society of Applied Physics.