Nondestructive depth profiling of carrier lifetimes in full silicon wafers

D. Guidotti; J.S. Batchelder; J.A. Van Vechten; A. Finkel

doi:10.1063/1.96764

Applied Physics Letters

Paper

01 Dec 1986

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

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Abstract

We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.

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Abstract

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