Nondestructive depth profiling of carrier lifetimes in full silicon wafers

D. Guidotti; J.S. Batchelder; J.A. Van Vechten; A. Finkel

doi:10.1063/1.96764

Applied Physics Letters

Paper

01 Dec 1986

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

View publication

Abstract

We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.

Paper

Non-intrusive mapping of subsurface defects in semiconductors

D. Guidotti, M.A. Taubenblatt, et al.

Applied Physics A Solids and Surfaces

Paper

Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si

J.A. Van Vechten

Physical Review B

Paper

First-overtone response in modulated photoluminescence emission in silicon at room temperature

D. Guidotti, J.S. Batchelder, et al.

Physical Review B

Paper

Electronic dilation of si during pulsed laser annealing

J.A. Van Vechten

Japanese Journal of Applied Physics

View all publications

Abstract

Related

Non-intrusive mapping of subsurface defects in semiconductors

Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si

First-overtone response in modulated photoluminescence emission in silicon at room temperature

Electronic dilation of si during pulsed laser annealing