Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs

Abstract

Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.