Noise Temperature in Silicon in the Hot Electron Region

Abstract

The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature Tn versus field E may be approximated by © 1971, IEEE. All rights reserved.