R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated, while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphitelike BC2N, and of the close-packed surfaces of Co, Ni, and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are, respectively, a semimetal, an insulator, a semiconductor, and ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors with any desired resistance-area product. © 2011 American Physical Society.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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