True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A method which for the first time can treat two truly semi-infinite semiconductors in contact is introduced and used to study the electronic structure of the two polar (100) Ge-GaAs interfaces. Both the Ge-Ga and the Ge-As interfaces exhibit essentially three interface bands. The nature and origins of these bands are discussed in detail in terms of local densities of states. The results are used to obtain a new interpretation of the experimental data in terms of a stoichiometrically mixed interface. © 1979.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP