Maria Gherasimova, See Wee Chee, et al.
International Journal of High Speed Electronics and Systems
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.
Maria Gherasimova, See Wee Chee, et al.
International Journal of High Speed Electronics and Systems
Jeung Hun Park, Nicholas M. Schneider, et al.
Nano Letters
Cheng-Yen Wen, Mark C. Reuter, et al.
Nano Letters
Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters