Nanometer resolution in luminescence microscopy of III-V heterostructures

D.L. Abraham; A. Veider; C. Schönenberger; H.P. Meier; D.J. Arent; S.F. Alvarado

doi:10.1063/1.103154

Applied Physics Letters

Paper

01 Dec 1990

Nanometer resolution in luminescence microscopy of III-V heterostructures

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Abstract

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

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A differential interferometer for force microscopy

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Scanning tunneling microscopy as a tool to study surface roughness of sputtered thin films

C. Schönenberger, S.F. Alvarado, et al.

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Separation of magnetic and topographic effects in force microscopy

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Journal of Applied Physics

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Abstract

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