S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
The current status of MOVPE for high-quality AlGaInP/GaInP heterostructure visible laser diodes is reviewed. It is shown that a detailed understanding of atomic ordering, heterointerface properties, and non-radiative traps in AlGaInP and dopant incorporation is necessary to obtain high-performance laser diodes emitting in the 600 nm range. In detail, the influence of a PH3 purifier on optical properties of AlGaInP and AlGaInP/GaInP heterostructures is discussed, and for controlled p-doping of AlGaInP, the effects of Zn and Mg incorporation are compared. Improvements in material quality and doping control have enabled us to realize index guided, AlGaInP/GaInP double heterostructure lasers emitting at λ ∼ 670 nm with a cw output power exceeding 20 mW and a maximum operation temperature of 100°C. © 1991.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Imran Nasim, Melanie Weber
SCML 2024
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999