J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
T. Schneider, E. Stoll
Physical Review B
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997