Arvind Kumar, Tak H. Ning, et al.
VLSI Technology 2002
By use of a Monte Carlo technique, it is shown that high-field electron transport in the SiO2 conduction band is controlled by LO-phonon scattering for fields below 3 × 106 V/cm and by nonpolar scattering with acoustic phonons at higher fields. This accounts for recent experimental results indicating that an energy-loss mechanism, previously neglected, is effective at high fields. © 1984 The American Physical Society.
Arvind Kumar, Tak H. Ning, et al.
VLSI Technology 2002
Santhosh Krishnan, Dragica Vasileska, et al.
Microelectronics Journal
Santhosh Krishnan, Dragica Vasileska, et al.
Journal of Computational Electronics
Sufi Zafar, Alessandro Callegari, et al.
IEDM 2002