S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A self-consistent Monte Carlo-Poisson device-simulation program has been used to study hot-carrier transport in a variety of 'small' devices (submicron Si MOSFETs, thin-base Si bipolar transistors, GaAs MESFETs). In all of these devices, provided realistically highly-doped contact regions are included, the long-range intercarrier Coulomb interaction appears to play a major role: via electron-plasma energy losses in short channel MOSFETs, via correlation-energy effects in the emitter of Si n-p-n bipolar transistors. Moreover, in the quasi-ballistic regime of very small devices realistically scaled and driven at realistically large biases, band-structure effects dominate to such an extent that the device behavior is explained better by the medium-high energy similarities of the band-structure of zinc-blend semiconductors than by the more familiar low-energy concepts (e.g., mobility and effective-mass). We will argue that realistic technological assumption about 'faster(?)' GaAs-based, logic-circuit-oriented MOSFETs may actually leave untouched the supremacy of the Si-based technology in the submicrometer-range. © 1989.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP