R.J.S. Bates, D.L. Rogers
ECOC 1988
High-performance interdigitated metal-semiconductor-metal detectors and photoreceivers have been fabricated using a standard refractory-gate, ion-implanted MESFET process which was also used to fabricate complex digital circuits. A rise time of 110 ps has been observed for a detector-preamplifier combination, implying a small-signal bandwidth of about 3 GHz. Detector responsivities as high as 0. 45 A/W, and dark currents as low as 5 nA have been observed.
R.J.S. Bates, D.L. Rogers
ECOC 1988
J. Schaub, S.M. Csutak, et al.
LEOS 2002
M.B. Ritter, F.R. Gfeller, et al.
ISSCC 1996
J. Schaub, D. Kuchta, et al.
OFC 2001