Molecular beam epitaxy of AlSb

Abstract

AlSb has been grown on (100)GaAs and GaSb by molecular beam epitaxy with good surface finish. High energy electron diffraction study reveals different interface morphologies between AlSb and GaAs, GaSb or InAs. Smooth interfaces are observed for AlSb-GaSb and AlSb-InAs while an initial stage of three-dimensional growth is observed for the AlSb-GaAs interface. Ge doping gives p-type AlSb in the range of ∼1014-1019 cm -3 under normal growth conditions.