Lightweight Refresh Method for PCM-based Neuromorphic Circuits
M. Ito, Masatoshi Ishii, et al.
NANO 2018
An empirical, versatile finite-element model is developed to predict void formation in as-deposited or melt-quenched amorphous Ge2Sb2Te5 during annealing. This model incorporates void formation with nucleation and growth of the crystals along with thermal models that capture laser heating of the nano-structures during device fabrication. Modeling of void formation during Joule heating or furnace annealing can be implemented in a similar way. The modeling results are compared to example experimental results obtained from pore-cell phase change memory structures.
M. Ito, Masatoshi Ishii, et al.
NANO 2018
Win-San Khwa, Meng-Fan Chang, et al.
IEEE Electron Device Letters
Y. Xie, Wanki Kim, et al.
Advanced Materials
Jaeho Lee, Elah Bozorg-Grayeli, et al.
Applied Physics Letters