Mark T. Winkler, Wei Wang, et al.
Energy and Environmental Science
A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence degradation rate in GaAs, its power dependence, and its independence on lattice temperature.
Mark T. Winkler, Wei Wang, et al.
Energy and Environmental Science
Harold J. Hovel, D. Guidotti
IEEE T-ED
Harold J. Hovel
Solar Energy Materials
Daniel Guidotti
Proceedings of SPIE 1989