Conference paper
III-V photovoltaics - Recent developments and prospects
N. Sosa, Theodore G. Van Kessel, et al.
ECS Transactions
A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence degradation rate in GaAs, its power dependence, and its independence on lattice temperature.
N. Sosa, Theodore G. Van Kessel, et al.
ECS Transactions
Harold J. Hovel, Arthur G. Milnes
IEEE T-ED
Mark T. Winkler, Wei Wang, et al.
Energy and Environmental Science
Daniel Guidotti
Proceedings of SPIE 1989