The DX centre
T.N. Morgan
Semiconductor Science and Technology
Cr- and Mn-doped InN films were successfully grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Tow temperature GaN buffer layers grown by metalorganic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire. A high n-type carrier concentration of 1.5 × 1020 cm-3 was measured in InN films with 3% Cr-doping. Films of this type exhibit a well-defined in-plane magnetic hysteresis loop and remanence for temperatures varying from 5 to 300 K. The Mn-doped films, however, turned out to exhibit less clear magnetic properties. Thus, ferromagnetism in Cr-doped InN can be concluded from our measurements. © 2005 Springer Science+Business Media, Inc.
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A. Reisman, M. Berkenblit, et al.
JES
K.N. Tu
Materials Science and Engineering: A