G.M. Cohen, M.J. Rooks, et al.
Applied Physics Letters
A compact model to solve the complex behavior of double-gated field effect transistor (DGFET) was presented. The mixed-mode algorithm of the model transformed the DGFET into two single gate FETs in series. An effective perpendicular electric field, modified by the short-channel charge, was derived from DGFET and sub-threshold and short-channel effects were included.
G.M. Cohen, M.J. Rooks, et al.
Applied Physics Letters
S.D. Brorson, D.J. DiMaria, et al.
Journal of Applied Physics
E.C. Jones, M. Ieong, et al.
DRC 2001
B. Laikhtman, P. Solomon
Journal of Applied Physics